- 您现在的位置：买卖IC网 > Sheet目录515 > SIHU3N50D-E3 (Vishay Siliconix)MOSFET N-CH 500V 3A TO251 IPAK
Package Information
Vishay Siliconix
TO-251AA (HIGH VOLTAGE)
E1
4
Thermal PAD
3
E
4
b 4
A
0.010 0.25 M C A B
A
c2
θ 2
L2 4
θ 1
A
D1
4
B
3
C
Seating
5
plane
(Dat u m A)
L1 L3
C
C
L
B
B
A
3 x b 2
c
A1
V ie w A - A
2xe
3x b
0.010 0.25 M C A B
Base
Lead tip
Plating
5
b 1, b 3
metal
(c)
c1
5
( b , b 2)
Section B - B and C - C
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
A
A1
b
MIN.
2.18
0.89
0.64
MAX.
2.39
1.14
0.89
MIN.
0.086
0.035
0.025
MAX.
0.094
0.045
0.035
DIM.
D1
E
E1
MIN.
5.21
6.35
4.32
MAX.
-
6.73
-
MIN.
0.205
0.250
0.170
MAX.
-
0.265
-
b1
0.65
0.79
0.026
0.031
e
2.29 BSC
2.29 BSC
b2
b3
b4
c
c1
c2
0.76
0.76
4.95
0.46
0.41
0.46
1.14
1.04
5.46
0.61
0.56
0.86
0.030
0.030
0.195
0.018
0.016
0.018
0.045
0.041
0.215
0.024
0.022
0.034
L
L1
L2
L3
θ 1
θ 2
8.89
1.91
0.89
1.14
0'
25'
9.65
2.29
1.27
1.52
15'
35'
0.350
0.075
0.035
0.045
0'
25'
0.380
0.090
0.050
0.060
15'
35'
D
5.97
6.22
0.235
0.245
ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension are shown in inches and millimeters.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.
5. Lead dimension uncontrolled in L3.
6. Dimension b1, b3 and c1 apply to base metal only.
7. Outline conforms to JEDEC outline TO-251AA.
Document Number: 91362
Revision: 15-Sep-08
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SIHU5N50D-E3
MOSFET N-CH 500V 5.3A TO251 IPAK
SIJ400DP-T1-GE3
MOSFET N-CH 30V PPAK SO-8L
SIJ458DP-T1-GE3
MOSFET N-CH 30V 8-SOIC
SIJ482DP-T1-GE3
MOSFET N-CH 80V 60A SO-8
SIJ800DP-T1-GE3
MOSFET N-CH 40V PPAK SO-8L
SIM-012SBT87
EMITTER IR SIDE VIEW SMD T/R
SIM-030ST
LED IR 870NM 30MW SR SMD
SIM-20ST
EMITTER IR 950NM SIDE VIEW TH
相关代理商/技术参数
SiHU3N50D-GE3
功能描述:MOSFET 500V 3A 3.2Ohm @ 10V
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIHU5N50D
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:D Series Power MOSFET
SIHU5N50D-E3
功能描述:MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SiHU5N50D-GE3
功能描述:MOSFET 500V 5A 1.5Ohm @ 10V
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIHU6N62E-GE3
制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel
SIHU7N60E
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:E Series Power MOSFET
SIHU7N60E-E3
功能描述:MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIHU7N60E-GE3
功能描述:MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube